Investigating the Properties of Indium-Free Amorphous Oxide Semiconductor Films for Potential TFT Application on Flexible Substrates
Robert Alston1, Jia Li1 and Shanthi Iyer1,2*
Affiliation
- 1Department of Electrical and Computer Engineering, North Carolina Agricultural & Technical State University, Greensboro, NC, USA
- 2Department of Nanoengineering, North Carolina Agricultural & Technical State University, Greensboro, NC, USA
Corresponding Author
Shanthi Iyer, Department of Electrical and Computer Engineering, North Carolina Agricultural & Technical State University, Greensboro, NC, USA 27411. E-mail: sni0124@gmail.com
Citation
Shanthi, I., et al. Investigating the Properties of Indium-Free Amorphous Oxide Semiconductor Films for Potential TFT Application on Flexible Substrates (2014) J Nanotech Mater Sci 1(1): 7-11.
Copy rights
© 2014 Shanthi I. This is an Open access article distributed under the terms of Creative Commons Attribution 4.0 International License.
Keywords
Abstract
RF-sputtered gallium tin zinc oxide (GSZO) thin fims for application in transparent amorphous oxide semiconductors (TAOSs) have been investigated. Morphological, structural, electrical, optical properties and its mechanical robustness have been studied on polyethylene naphthalate (PEN) substrates using variety of characterization techniques. The fims deposited on PEN substrates retained amorphous structure even after annealing for 12 hours in vacuum at 200°C. The optical band edge is ~ 3.3eV, greater than ZnO fims. Best μHall of 3 cm²V- 1s- 1 have been observed on annealed GSZO fims at 200°C. The critical radii of bending improve from 14.5 mm to 11 mm with decreasing RF power of deposition from 90W to 80W, indicative of its suitability for flxible electronics.
